г. Москва, Дмитровское шоссе д.9А стр. 1
Характеристики SO-DIMM DDR-3 4Gb с разбора
SO-DIMM DDR-3 |
Описание: SO-DIMM DDR-3 4Gb с разбора
Модуль оперативной памяти (RAM) SO-DIMM DDR-3 4Gb с разбора
4GB DDR3-1333 2Rx8 PC3-10600S-9-10-F20
Kingston ACR512X64D3S13C9G
16 BGA chips Kingston D2568JENCPGD90
KN4GB07001
KN.4GB07.001
4GB DDR3-1600 1Rx8 PC3L-12800S-11-11-B2
Samsung M471B5173BH0-YK0
8 BGA chips SEC K4B4G0846B
4GB DDR3-1600 2Rx8 PC3-12800S-11-11-F3
Hynix HMT351S6CFR8C-PB
16 BGA chips Hynix H5TQ2G83CFR-PBC
4GB DDR3-1600 2Rx8 PC3-12800S-11-10-F2
Samsung M471B5273CH0-CK0
16 BGA chips SEC K4B2G0846C
4GB DDR3-1333 2Rx8 PC3-10600S-9-11-F3
Hynix HMT351S6CFR8C-H9
16 BGA chips Hynix H5TQ2G83CFR-H9C
4GB DDR3-1600 2Rx8 PC3-12800S-11-11-F3
RAMATEL
16 BGA chips ELPIDA J2108BDBG-GN-F
4GB DDR3-1600 2Rx8 PC3-12800S-11-10-B2
ELPIDA EBJ40UG8BBU0-GN-F
Kingston P1031237X008 993981-002.A00G
8 BGA chips ELPIDA J4208BBBG-GN-F
4GB DDR3-1600 2Rx8 PC3-12800S-11-12-F3
SK Hynix HMT351S6CFR8C-PB
16 BGA chips SK Hynix H5TQ2G83CFR-PBC
4GB DDR3-1600 1Rx8 PC3L-12800S-11-12-B4
SK Hynix HMT451S6AFR8A-PB
8 BGA chips SK Hynix H5TC4G83AFR-PBA
4GB DDR3-1600 1Rx8 PC3L-12800S-11-11-B3
Kingston ASU16D3LS1KBG/4G
6315977-1335
9995417-E12.A00G
8 BGS chips Kingston D5128EETBPGGBU
4GB DDR3-1600 1Rx8 PC3L-12800S-11-11-B3
Kingston ASU16D3LS1KBG/4G
6232407-1325
9995417-E12.A00G
8 BGA chips Kingston D5128EETBPGGBU
4GB DDR3-1333 2Rx8 PC3-10600S-09-11-F3
Samsung M471B5273DH0-CH9
16 BGA chips Samsung K4B2G08460
4GB DDR3-1600 2Rx8 PC3-12800S-11-10-F2
Samsung M471B5273CH0-yK0
16 BGA chips SEC K4B2G0846C
4GB DDR3-1600 2Rx8 PC3-12800S-11-11-F3
Kingston ASU1600S11-4G-EDEG
5782846-1219
5816377-1223
6041011-1249
9995428-924.A00G